Nonvolatile magnetoresistive storage device using spin valve eff

Static information storage and retrieval – Systems using particular element – Magnetic thin film

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365158, 360113, G11C 1115

Patent

active

053434226

ABSTRACT:
A nonvolatile magnetoresistive (MR) storage device comprising a plurality of MR storage elements, each comprising a substrate and a multilayered structure including two thin film layers of ferromagnetic material separated by a thin layer of nonmagnetic metallic conducting material. The magnetization easy axis of both ferromagnetic layers in each storage element is oriented substantially lengthwise of the storage elements and substantially parallel to the direction of an applied sense current. The magnetization direction of one of the ferromagnetic layers is fixed in a direction substantially lengthwise of the storage elements, and the magnetization direction of the other layer is free to switch between two digital states in which the magnetization is substantially parallel or substantially antiparallel to the magnetization direction in the one layer.

REFERENCES:
patent: 3623038 (1971-11-01), Franklin et al.
patent: 3701983 (1972-10-01), Franklin et al.
patent: 4547866 (1985-10-01), Lutes et al.
patent: 4857418 (1989-08-01), Schuetz
patent: 5159513 (1992-10-01), Dieny et al.
patent: 5173873 (1992-12-01), Wu et al.
"Enhanced Magnetoresistance in Layered Magnetic Structures with Antiferromagnetic Interlayer Exchange", Physical Review B of American Physical Society, vol. 39, No. 7, p. 4828 (1989), pp. 4828-4830.
"Memory Implications of the Spin-Valve Effect in Soft Multilayers," A. V. Pohm and C. S. Comstock, Journal of Appl. Phys. 69(8) Apr. 15, 1991, pp. 5760-5762.
"Quadrupled nondestrictive Outputs from Magnetoresistive Memory Cells Using Reversed Word Fields", A. V. Pohm and C. S. Comstock, Journal of Appl. Phys. 67(9) May 1, 1990 pp. 4881-4883.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Nonvolatile magnetoresistive storage device using spin valve eff does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile magnetoresistive storage device using spin valve eff, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile magnetoresistive storage device using spin valve eff will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-34622

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.