Nonvolatile magnetoresistive memory with fully closed flux opera

Details Nonvolatile magnetoresistive memory with fully closed flux opera Nonvolatile magnetoresistive memory with fully closed flux opera

1995-02-13

1996-12-24

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365173, G11C 1115

Patent

active

055879438

ABSTRACT:
A memory cell including a storage element having a first structure with a plurality of layers, selected layers having magnetization vectors associated therewith, the first structure exhibiting giant magnetoresistance, wherein the storage element has a closed flux structure in at least one dimension, and wherein the magnetization vectors are confined to the at least one dimension during all stages of operation of the storage element. The memory cell includes a means for reading information from and writing information to the first structure and a selection conductor for applying one or more selection signals to the storage element to enable reading from and writing to the first structure. In one embodiment, the reading and writing means includes a read conductor electrically coupled to the first structure, and a write conductor electrically isolated from the read conductor and the first structure. In a second embodiment, the reading and writing means is a single conductor electrically coupled to the first structure.

REFERENCES:
patent: 2911627 (1959-11-01), Kilburn et al.
patent: 4780848 (1988-10-01), Daughton et al.
patent: 5173873 (1992-12-01), Wu et al.
patent: 5251170 (1993-10-01), Daughton et al.
patent: 5432734 (1995-07-01), Kawano et al.
patent: 5442508 (1995-08-01), Smith
patent: 5477482 (1995-12-01), Prinz
Pratt, W. P., et al., "Perpendicular Giant Magnetoresistances of Ag/Co Multilayers," Physical Review Letters, 66(23):3060-3063 (Jun. 1991).
Parkin, S. S. P., et al., "Oscillatory Magnetic Exchange Coupling through Thin Copper Layers," Physical Review Letters, 66(16):2152-2155 (Apr. 1991).
Jones, K., "Texas Instruments Plans Large Expansion," The New York Times (Aug. 20, 1993).
Callaby, D. R., et al., Solid State Memory Study Final Report, Technical Report No. RE-0013, National Media Lab, St. Paul, MN (Feb. 1994).
National Media Laboratory Spring Review on Solid-State Memory Technologies, Proc. 1994 Spring Conference on Solid-State Memory Technologies, Pasadena, CA, (May 23-25, 1994), pp. 3-8, 97, 121, 123-133.
Harrison, R. W., "Laser Scanning Surface Profilometer," IBM Technical Disclosure Bulletin, 13(3):789-790 (Aug. 1970).
Hylton, T. L., et al., "Giant Magnetoresistance at Low Fields in Discontinuous NiFe-Ag Multilayer Thin Films," Science, 261:1021-1024 (Aug. 1993).
Berkowitz, A. E., et al., "Giant Magnetoresistance in Heterogeneous Cu-Co Alloys," Physical Review Letters, 68(25):3745-3748 (Jun. 1992).
Zhang, S., "Theory of Giant Magnetoresistance in Magnetic Granular Films," Appl. Phys. Lett., 61(15):1855-1857 (Oct. 1992).

Affiliated with

Also associated with

Rating

Nonvolatile magnetoresistive memory with fully closed flux opera does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile magnetoresistive memory with fully closed flux opera, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile magnetoresistive memory with fully closed flux opera will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1183309