Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-06-16
2010-10-19
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S421000, C257S295000, C365S158000, C365S173000
Reexamination Certificate
active
07816719
ABSTRACT:
A nonvolatile magnetic memory device including a magntoresistance device having a recording layer formed of a ferromagnetic material for storing information by use of variation in resistance depending on the magnetization inversion state. The plan-view shape of the recording layer includes a pseudo-rhombic shape having four sides, at least two of the four sides each include a smooth curve having a central portion curved toward the center of the pseudo-rhombic shape. The easy axis of magnetization of the recording layer is substantially parallel to the longer axis of the pseudo-rhombic shape. The hard axis of magnetization of the recording layer is substantially parallel to the shorter axis of the pseudo-rhombic shape. The sides constituting the plan-view shape of the recording layer are smoothly connected to each other.
REFERENCES:
patent: 6956270 (2005-10-01), Fukuzumi
patent: 2004-128067 (2004-04-01), None
patent: 2005-064075 (2005-03-01), None
patent: 2005-535111 (2005-11-01), None
A Japanese Office Action issued on Apr. 7, 2009, in connection with counterpart Japanese Patent Application No. 2004-172122.
Le Thao X
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
Tran Thanh Y
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