Nonvolatile magnetic memory device and method of writing...

Details Nonvolatile magnetic memory device and method of writing... Nonvolatile magnetic memory device and method of writing...

2006-04-25

2006-04-25

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S185280, C365S048000

Reexamination Certificate

active

07035136

ABSTRACT:
A nonvolatile magnetic memory device having a nonvolatile magnetic memory array comprising write-in word line(s), bit lines and tunnel magnetoresistance devices, wherein when data is written into the tunnel magnetoresistance device, a current I(m)RWLis passed through the m-th-place write-in word line, a current g(0)·I(n)BLis passed through the n-th-place bit line, and at the same time, a current g(k)·I(n)BLis passed through the q-th-place bit line (q=n+k, k is ±1, ±2, . . . , and the total number of the lines is K), and a spatial FIR filter assuming magnetic fields, which are supposed to be formed in the n-th-place bit line and the bit lines that are K in number by the current I(n)BL, to be discrete pulse response and assuming the coefficients g(0) and g(k) to be tap-gains is constituted of the n-th-place bit line and the bit lines that are K in number.

REFERENCES:
patent: 5459687 (1995-10-01), Sakakima et al.
patent: 5940319 (1999-08-01), Durlam et al.
patent: 2002/0051381 (2002-05-01), Numata et al.
patent: 2002-203388 (2002-07-01), None

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