Nonvolatile magnetic memory device

Details Nonvolatile magnetic memory device Nonvolatile magnetic memory device

2005-10-25

2005-10-25

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S298000, C257S303000, C257S306000, C257S324000, C257S421000, C438S003000, C438S240000

Reexamination Certificate

active

06958503

ABSTRACT:
The MRAM has a transistor for selection, a lower insulating interlayer, a first connecting hole, a first wiring formed on the lower insulating interlayer, a tunnel magnetoresistance device formed on the first wiring through an insulating film, an upper insulating interlayer, and a second wiring, in which a lower surface of the tunnel magnetoresistance device is electrically connected to the first connecting hole through a second connecting hole, and the tunnel magnetoresistance device, the insulating film and the first wiring have nearly the same widths along the second direction.

REFERENCES:
patent: 5940319 (1999-08-01), Durlam et al.
patent: 6174737 (2001-01-01), Durlam et al.
patent: 6703676 (2004-03-01), Hirai et al.

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