Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2011-04-26
2011-04-26
Pert, Evan (Department: 2826)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
Reexamination Certificate
active
07933145
ABSTRACT:
A nonvolatile magnetic memory device includes a magnetoresistance effect element that includes: a layered structure having a recording layer; a first wiring electrically connected to a lower part of the layered structure; a second wiring electrically connected to an upper part of the layered structure; and an interlayer insulation layer surrounding the layered structure. The magnetoresistance effect element further includes a low Young modulus region having a Young modulus lower than that of a material forming the interlayer insulation layer. The recording layer has an easy magnetization axis, and a hard magnetization axis orthogonal to the easy magnetization axis. When the magnetostriction constant λ of a material forming the recording layer is a positive value or a negative value, the low Young modulus region is disposed in an extension region of the easy magnetization axis or in an extension region of the hard magnetization axis of the recording layer, respectively.
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Hosomi Masanori
Ichikawa Shoji
Kinoshita Takashi
Shoji Mitsuhara
Yamagishi Hajime
Pert Evan
Sony Corporation
Wolf Greenfield & Sacks P.C.
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