Nonvolatile flash memory device

Details Nonvolatile flash memory device Nonvolatile flash memory device

2007-02-13

2007-02-13

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000

Reexamination Certificate

active

11024438

ABSTRACT:
A method of fabricating nonvolatile memory devices is disclosed. A nonvolatile memory device comprises: a polysilicon gate on a semiconductor substrate; a gate oxide layer between the polysilicon gate and the substrate; sidewall floating gates on the bottom of the lateral faces of the polysilicon gate; tunnel oxide layers between the sidewall floating gates and the substrate; block oxide layers between the polysilicon gate and the sidewall floating gates; sidewall spacers on the sidewalls of the polysilicon gate and the sidewall floating gates; source and drain extension regions on the substrate under the sidewall spacers; and source and drain regions adjacent to the source and drain extension regions.

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