Nonvolatile ferroelectric-semiconductor memory

Details Nonvolatile ferroelectric-semiconductor memory Nonvolatile ferroelectric-semiconductor memory

1995-01-18

1996-07-30

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365117, 257295, G11C 1122, G11C 700

Patent

active

055418716

ABSTRACT:
Nonvolatile memory with simple structure where recorded information can be read without destroy: Voltage is impressed to control gate CG and channel is grounded at writing operation. Ferroelectric layer 32 is polarized in accordance with whether the applied voltage is larger than threshold voltage of the memory device. Control gate voltage V.sub.CC to make channel is little when the ferro-electric layer 32 is polarized with control gate side being positive (polarized with second status). Control gate voltage V.sub.CG to make channel is large when the ferroelectric layer 32 is polarized with control gate side being negative (polarized with first status). The reference voltage V.sub.ref is impressed to the control gate CG at reading operation. Large drain current flows when the ferroelectric layer is polarized with second status and little drain current flows when the ferroelectric layer is polarized with first status. Recorded information can be read by detecting the drain current. By this reading operation, polarization status is not destroyed.

REFERENCES:
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 4888733 (1989-12-01), Mobley
patent: 5303182 (1994-04-01), Nakao
patent: 5365094 (1994-11-01), Takasu

Affiliated with

Also associated with

Rating

Nonvolatile ferroelectric-semiconductor memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile ferroelectric-semiconductor memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile ferroelectric-semiconductor memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1665589