Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1997-03-14
1998-12-22
Nelms, David
Static information storage and retrieval
Systems using particular element
Ferroelectric
365149, 365210, G11C 1122
Patent
active
058525718
ABSTRACT:
A ferroelectric memory device has a folded bit line architecture. The ferroelectric memory device may include a selectable upper even memory cell connected to an upper even bit line, a sense amplifier having a first input and a second input; control circuitry operable to connect an upper odd bit line to a lower odd bit line at the first input of the sense amplifier, to connect the upper even bit line to the second input of the sense amplifier, and to isolate a lower even bit line from the second input of the sense amplifier; and a selectable lower odd reference cell, connected to the lower odd bit line.
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Ho Hoai V.
Micro)n Technology, Inc.
Nelms David
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