Nonvolatile ferroelectric memory with folded bit line architectu

Details Nonvolatile ferroelectric memory with folded bit line architectu Nonvolatile ferroelectric memory with folded bit line architectu

1998-11-30

1999-11-30

Hoang, Huan

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365210, G11C 1122

Patent

active

059954086

ABSTRACT:
A ferroelectric memory device having a folded bit line architecture. The ferroelectric memory device may include a selectable upper even memory cell connected to an upper even bit line, a sense amplifier having a first input and a second input; control circuitry operable to connect an upper odd bit line to a lower odd bit line at the first input of the sense amplifier, to connect the upper even bit line to the second input of the sense amplifier, and to isolate a lower even bit line from the second input of the sense amplifier; and a selectable lower odd reference cell, connected to the lower odd bit line.

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