Nonvolatile ferroelectric memory using selective reference cell

Details Nonvolatile ferroelectric memory using selective reference cell Nonvolatile ferroelectric memory using selective reference cell

1999-10-28

2000-11-14

Mai, Son

Static information storage and retrieval

Systems using particular element

Ferroelectric

365210, G11C 1122

Patent

active

061478962

ABSTRACT:
A nonvolatile ferroelectric memory that reduces the number of cycles of reference cells to extend lifetime of memory. A reference cell of the memory is activated to provide a reference voltage to a sense amplifier only when the sense amplifier needs the reference voltage. The memory comprises a plurality of cells arranged in a matrix form and including memory cells and reference cells, and a plurality of sense amplifiers arranged in a row of the matrix, in which each sense amplifier compares voltages induced from a reference cell and a selected memory cell to read information stored in the selected memory cell, and in which each reference cell is activated only when both a selection signal from a column address and a word line connected to said reference cell are enabled.

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Tasumi et al., "A 256kb Nonvolatile Ferroelectric Memory at 3V and 100ns," IEEE International Solid-State Circuits Conference, pp. 268-269, Feb. 1994.
Tanabe et al., "A High Density 1T/2C Cell with Vcc/2 Reference Level for High Stable FeRAMs," IEEE IEDM, pp. 863-866, Dec. 1997.
Yamada et al., "A Self-Reference Read Scheme for a 1T/1C FeRAM," 1998 Symposium on VLSI Circuits Digest of Technical Papers, pp. 238-241, Jun. 1998.

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