Nonvolatile ferroelectric memory device using silicon...

Details Nonvolatile ferroelectric memory device using silicon... Nonvolatile ferroelectric memory device using silicon...

2011-04-26

2011-04-26

Gurley, Lynne A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S315000, C257SE21436, C257SE21663, C257SE27104, C257SE29272

Reexamination Certificate

active

07932547

ABSTRACT:
A nonvolatile ferroelectric memory device using a silicon substrate includes an insulating layer formed in an etching region of the silicon substrate, a bottom word line formed in the insulating layer so as to be enclosed by the insulating layer, a floating channel layer formed over the bottom word line, an impurity layer formed at both ends of the floating channel layer and including a source region formed over the insulating layer and a drain region formed over the silicon substrate, a ferroelectric layer formed over the floating channel layer, and a word line formed over the ferroelectric layer.

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