Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2004-06-30
2008-08-19
Ho, Hoai V. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S230050, C365S189050, C365S189110
Reexamination Certificate
active
07414876
ABSTRACT:
A nonvolatile ferroelectric memory device having a power control function improves a sensing margin by stably controlling a power applied to a cell capacitor. The sensing margin of a cell can be improved by controlling an operation voltage of the cell depending on an external supply voltage VEXT and applying a power voltage VCC obtained by dropping an external power voltage to adjacent circuits. Additionally, the reliability of a capacitor at a high voltage can be improved by employing a ferroelectric capcitor for stabilizing power to obtain capacitance of high capacity with a small area.
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Graham Kretelia
Ho Hoai V.
Hynix / Semiconductor Inc.
Townsend and Townsend / and Crew LLP
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