Nonvolatile ferroelectric memory device having power control...

Static information storage and retrieval – Systems using particular element – Ferroelectric

Reexamination Certificate

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C365S189110

Reexamination Certificate

active

07099177

ABSTRACT:
A nonvolatile ferroelectric memory device having a power control function improves a sensing margin by stably controlling a power applied to a cell capacitor. In the nonvolatile ferroelectric memory device, an operating voltage of the cell is controlled depending on an external supply voltage in order to apply the highest voltage to the cell capacitor, and a power voltage obtained by dropping an external power voltage is applied to adjacent circuits in order to apply a lower voltage to adjacent circuits. Additionally, different ESD (Electro Static Discharge) circuits for performing an electrostatic discharge function in an input/output unit are embodied depending on the supplied voltage level, thereby stabilizing power.

REFERENCES:
patent: 5953261 (1999-09-01), Furutani et al.
patent: 6272594 (2001-08-01), Gupta
patent: 6285576 (2001-09-01), Kang
patent: 6342794 (2002-01-01), Turner et al.
patent: 6363439 (2002-03-01), Battles et al.
patent: 6483357 (2002-11-01), Kato et al.
patent: 6525362 (2003-02-01), Sadayuki
patent: 6671147 (2003-12-01), Ker et al.
patent: 6809952 (2004-10-01), Masui
patent: 6819584 (2004-11-01), Noh
patent: 2002-0085533 (2002-12-01), None

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