Nonvolatile ferroelectric memory device having multi-bit...

Details Nonvolatile ferroelectric memory device having multi-bit... Nonvolatile ferroelectric memory device having multi-bit...

2005-02-01

2005-02-01

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S145000, C365S168000, C365S220000, C365S209000, C365S189070, C365S051000, C365S065000, C365S230030, C365S203000, C365S189020, C365S239000

Reexamination Certificate

active

06850447

ABSTRACT:
A nonvolatile ferroelectric memory device having a multi-bit control function performs read/write operations by selecting a plurality of cells simultaneously, thereby improving the operation speed of a chip. In the nonvolatile ferroelectric memory device, a plurality of cells are selected at the same time, and stable sensing values of data having a small distribution can be obtained by using average characteristics of a plurality of selected cells. Accordingly, since two or more cells are simultaneously selected and a plurality of bits are read/written in the cells depending on stabilized charge, the operation speed of a chip can be improved.

REFERENCES:
patent: 6067265 (2000-05-01), Mukunoki et al.
patent: 6587367 (2003-07-01), Nishimura et al.

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