Nonvolatile ferroelectric memory device having multi-bit...

Static information storage and retrieval – Read/write circuit – Differential sensing

Reexamination Certificate

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C365S230030, C365S233100, C365S189070, C365S189050, C365S203000, C365S202000, C365S196000, C365S189020, C365S209000

Reexamination Certificate

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06870785

ABSTRACT:
A nonvolatile ferroelectric memory device having a multi-bit control function can store and sense multi-bit data in a ferroelectric memory cell. In the memory device, a plurality of cell array blocks generates a plurality of different sensing critical voltages in a reference timing strobe interval. As a result, in different time intervals, the plurality of sensing critical voltages are compared with a plurality of cell data sensing voltages applied from a main bitline. A data register array unit stores a plurality of cell data applied from the plurality of cell array blocks in response to a plurality of read lock signals activated at different timings in different time intervals, respectively. Therefore, the plurality of data bits can be stored in a cell.

REFERENCES:
patent: 6587367 (2003-07-01), Nishimura et al.
patent: 6721200 (2004-04-01), Nishimura et al.
patent: 6724646 (2004-04-01), Nishimura et al.
patent: 6728128 (2004-04-01), Nishimura et al.

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