Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2007-01-30
2007-01-30
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S189030, C365S189050, C365S189110, C365S189120, C365S230030
Reexamination Certificate
active
11291004
ABSTRACT:
A nonvolatile ferroelectric memory device having a multi control function can amplify sensing voltage levels in a sensing critical voltage and determine a plurality of cell data when a plurality of reference timing strobes are applied on a basis of a time axis. In a read mode, a plurality of read data applied from a cell array block are stored in a read/write data register array unit through a common data bus unit. In a write mode, a plurality of read data stored in the read/write data register array unit or input data applied from a timing data buffer unit are stored in a cell, array block through the common data bus unit. Here, since a plurality of sensing voltage levels are set in cell data, a plurality of sensed data bits can be stored in one cell.
REFERENCES:
patent: 6067244 (2000-05-01), Ma et al.
patent: 6272594 (2001-08-01), Gupta et al.
patent: 6301145 (2001-10-01), Nishihara
patent: 6314016 (2001-11-01), Takasu
patent: 6363439 (2002-03-01), Battles et al.
patent: 1020040059009 (2004-07-01), None
Heller Ehrman LLP
Hynix / Semiconductor Inc.
Luu Pho M.
Phung Anh
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