Nonvolatile ferroelectric memory device and method of...

Details Nonvolatile ferroelectric memory device and method of... Nonvolatile ferroelectric memory device and method of...

2005-01-18

2005-01-18

Le, Thong Q. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S230030

Reexamination Certificate

active

06845030

ABSTRACT:
A nonvolatile ferroelectric memory device includes a plurality of top array blocks disposed along a first direction, each having a plurality of top sub-cell array blocks disposed along a second direction perpendicular to the first direction, each of the top sub-cell array blocks include a first plurality of unit cells, a plurality of bottom array blocks disposed along the first direction below the plurality of top array blocks, each having a plurality of bottom sub-cell array blocks disposed along the second direction, each of the bottom sub-cell array blocks include a second plurality of unit cells, a plurality of sub-bit lines extending along the second direction and disposed at equal first intervals along the first direction, each sub-bit line connected to at least a first end of one of the first and second pluralities of unit cells, and a plurality of main bit lines extending along the second direction and disposed at the equal first intervals along a third direction perpendicular to both the first and second directions.

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patent: 6028813 (2000-02-01), Choi
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patent: 11-306766 (1999-11-01), None
patent: 11-353882 (1999-12-01), None

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