Nonvolatile ferroelectric memory device and method for...

Details Nonvolatile ferroelectric memory device and method for... Nonvolatile ferroelectric memory device and method for...

2005-04-12

2005-04-12

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S065000, C365S230030

Reexamination Certificate

active

06879510

ABSTRACT:
A nonvolatile ferroelectric memory device includes a top cell array block having a first plurality of unit cells, each with a pair of first and second top split wordlines, a bottom cell array block provided with a second plurality of unit cells, each having a pair of first and second bottom split wordlines to correspond to the pair of first and second top split wordlines, a top split wordline driver controlling an output signal transmitted to the first and second top split wordlines of the top cell array block, a bottom split wordline driver controlling an output signal transmitted to the first and second bottom split wordlines of the bottom cell array block, a split wordline driver controller outputting first and second split wordline control signals, and a sensing amplifier arranged for each bitline between the top cell array block and the bottom cell array block.

REFERENCES:
patent: 6091624 (2000-07-01), Kang
patent: 6198681 (2001-03-01), Forbes
patent: 6297985 (2001-10-01), Kang
patent: 6297986 (2001-10-01), Jae Kap

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