Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2005-01-18
2005-01-18
Nguyen, Viet Q. (Department: 2818)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S149000, C365S230030, C365S230060
Reexamination Certificate
active
06845031
ABSTRACT:
A nonvolatile ferroelectric memory device and a method for driving the same are disclosed, the device and method devised to stabilize the operation processes and reduce the operation time. The nonvolatile ferroelectric memory device includes a cell array block having a plurality of unit cells being controlled by plate lines and wordlines, a plate line driver being positioned on one side of the cell array block to apply a driving signal to the plate lines, a wordline driver being positioned on the other side of the cell array block to apply a driving signal to the wordlines, a plurality of sub bitlines and main bitlines being arranged on the cell array block in the same direction, and switching control blocks controlling signals applied to the sub bitlines and main bitlines.
REFERENCES:
patent: 5373463 (1994-12-01), Jones, Jr.
patent: 5880989 (1999-03-01), Wilson et al.
patent: 5917746 (1999-06-01), Seyyedy
patent: 5995406 (1999-11-01), Kraus et al.
patent: 6091624 (2000-07-01), Kang
patent: 6097622 (2000-08-01), Shimizu et al.
patent: 6373743 (2002-04-01), Chen et al.
patent: 6560137 (2003-05-01), Allen et al.
patent: 6639857 (2003-10-01), Kang et al.
patent: 02000195278 (2000-07-01), None
patent: 02003030977 (2003-01-01), None
patent: 02003162894 (2003-06-01), None
Kang Hee Bok
Kim Jung Hwan
Kye Hun Woo
Lee Geun Il
Park Je Hoon
Hynix / Semiconductor Inc.
Nguyen Viet Q.
Piper Rudnick LLP
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