Nonvolatile ferroelectric memory device and control method...

Static information storage and retrieval – Systems using particular element – Ferroelectric

Reexamination Certificate

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C365S065000

Reexamination Certificate

active

11318630

ABSTRACT:
A nonvolatile ferroelectric memory device and a control method thereof are provided to control read/write operations of memory cell arrays whose channel resistance is differentiated depending on a polarity state of a ferroelectric material. In the device, data read from a memory cell are sensed and amplified through a sense amplifier, and the amplified data are stored in a register. Then, high data are written in all activated cells. Thereafter, new data applied from a data bus unit to a selected memory cell are written in response to an output signal from a column decoder, and data stored in the register are written-back in an unselected memory cell.

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