Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2007-05-01
2007-05-01
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S065000
Reexamination Certificate
active
11318630
ABSTRACT:
A nonvolatile ferroelectric memory device and a control method thereof are provided to control read/write operations of memory cell arrays whose channel resistance is differentiated depending on a polarity state of a ferroelectric material. In the device, data read from a memory cell are sensed and amplified through a sense amplifier, and the amplified data are stored in a register. Then, high data are written in all activated cells. Thereafter, new data applied from a data bus unit to a selected memory cell are written in response to an output signal from a column decoder, and data stored in the register are written-back in an unselected memory cell.
REFERENCES:
patent: 4740922 (1988-04-01), Ogawa
patent: 5148399 (1992-09-01), Cho et al.
patent: 5517445 (1996-05-01), Imai et al.
patent: 5818771 (1998-10-01), Yasu et al.
patent: 6151241 (2000-11-01), Hayashi et al.
patent: 6356519 (2002-03-01), Wakuda et al.
patent: 6459110 (2002-10-01), Tani
patent: 6473329 (2002-10-01), Nakamura
patent: 6522572 (2003-02-01), Nakamura
patent: 6617629 (2003-09-01), Drab et al.
patent: 6643162 (2003-11-01), Takeuchi et al.
patent: 6727536 (2004-04-01), Hasegawa et al.
patent: 7126185 (2006-10-01), Kang et al.
patent: 2001/0007531 (2001-07-01), Kang
patent: 2002/0036934 (2002-03-01), Hasegawa et al.
patent: 2004/0161887 (2004-08-01), Hasegawa et al.
patent: 2006/0138504 (2006-06-01), Kang et al.
patent: 2006/0138519 (2006-06-01), Kang et al.
patent: 2006/0138520 (2006-06-01), Kang et al.
patent: 2006/0138528 (2006-06-01), Kang et al.
patent: 2006/0268615 (2006-11-01), Kang et al.
patent: 2000285487 (2000-10-01), None
patent: 2002094020 (2002-03-01), None
Ahn Jin Hong
Kang Hee Bok
Heller Ehrman LLP
Nguyen Tan T.
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