Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2007-01-16
2007-01-16
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S065000
Reexamination Certificate
active
11091372
ABSTRACT:
A nonvolatile ferroelectric memory device features a multi-bit serial cell structure where read bit lines and write bit lines are divided to control read/write paths individually, thereby improving a transmission operation of serial data. In the nonvolatile ferroelectric memory device, a serial cell that comprises a plurality of switching devices and a plurality of ferroelectric capacitors is connected serially between a write switching device and a read switching device. The serial cell stores cell data applied from the write bit line sequentially in the plurality of ferroelectric capacitors at a write mode, and outputs the cell data stored in a plurality of ferroelectric capacitors to the read bit line at a read mode.
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Ahn Jin Hong
Kang Hee Bok
Heller Ehrman LLP
Hynix / Semiconductor Inc.
Nguyen Tan T.
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