Nonvolatile ferroelectric memory device

Details Nonvolatile ferroelectric memory device Nonvolatile ferroelectric memory device

2006-06-27

2006-06-27

Phan, Trong (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000

Reexamination Certificate

active

07068529

ABSTRACT:
The disclosed nonvolatile ferroelectric memory device comprises: a memory cell array including a plurality of memory cells connected to a plurality of wordlines and a plurality of platelines, respectively; a read control block configured to convert the data level voltage stored in the memory cell into a corresponding data bit value of a plurality of data bit values and output the converted value externally; and a write control block configured to write a plurality of bit data inputted externally as a corresponding data level voltage of a plurality of data level voltages in the memory cell, wherein bitlines are layered into main bitline and sub-bitline by reducing a current value corresponding to a sensing voltage of the sub-bitline at an initial level of the main bit line. As a result, the FRAM can write a plurality of data levels in one ferroelectric memory cell.

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