Nonvolatile ferroelectric memory device

Details Nonvolatile ferroelectric memory device Nonvolatile ferroelectric memory device

2006-07-11

2006-07-11

Tran, M. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000

Reexamination Certificate

active

07075810

ABSTRACT:
A nonvolatile ferroelectric memory device transmits/receives data of a cell by using a main bitline of a cell array block as a data bus in a system on chip (SOC) having a hierarchical bitline structure, thereby reducing the chip size. In the nonvolatile ferroelectric memory device, when an interface is performed between a logic processor and a cell array block, cell data and amplification data of a sense amplifier are transmitted into an I/O port interface unit by using a main bitline of the cell array block as a data bus, thereby improving the data access speed and reducing the whole chip size.

REFERENCES:
patent: 6272594 (2001-08-01), Gupta et al.
patent: 6356476 (2002-03-01), Kang
patent: 6363439 (2002-03-01), Battles et al.
patent: 6366489 (2002-04-01), Salling
patent: 6418043 (2002-07-01), Kang
patent: 6717840 (2004-04-01), Kang
patent: 6829155 (2004-12-01), Kang
patent: 6865120 (2005-03-01), Kang
patent: 6891742 (2005-05-01), Takano et al.

Affiliated with

Also associated with

Rating

Nonvolatile ferroelectric memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile ferroelectric memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile ferroelectric memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3588602