Nonvolatile ferroelectric memory device

Static information storage and retrieval – Systems using particular element – Ferroelectric

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S189040

Reexamination Certificate

active

06954370

ABSTRACT:
A nonvolatile ferroelectric memory device stores nonvolatile data in a ferroelectric capacitor and accesses cell data stored in a latch circuit of a sense amplifier in a read operation irrespective of a ferroelectric capacitor. Therefore, the nonvolatile ferroelectric memory cell overcomes the limit of the number of repeated writing operation due to the destroying operation of ferroelectric, and directly access data stored in a latch circuit to access data rapidly. As a result, the present invention obtains a high-speed nonvolatile FeRAM having a high reliability.

REFERENCES:
patent: 5406510 (1995-04-01), Mihara et al.
patent: 6201731 (2001-03-01), Kamp et al.
patent: 6272594 (2001-08-01), Gupta et al.
patent: 6363439 (2002-03-01), Battles et al.
patent: 6721198 (2004-04-01), Kang
patent: 1019990049972 (2001-06-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Nonvolatile ferroelectric memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile ferroelectric memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile ferroelectric memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3459497

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.