Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2005-10-11
2005-10-11
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S189040
Reexamination Certificate
active
06954370
ABSTRACT:
A nonvolatile ferroelectric memory device stores nonvolatile data in a ferroelectric capacitor and accesses cell data stored in a latch circuit of a sense amplifier in a read operation irrespective of a ferroelectric capacitor. Therefore, the nonvolatile ferroelectric memory cell overcomes the limit of the number of repeated writing operation due to the destroying operation of ferroelectric, and directly access data stored in a latch circuit to access data rapidly. As a result, the present invention obtains a high-speed nonvolatile FeRAM having a high reliability.
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patent: 6272594 (2001-08-01), Gupta et al.
patent: 6363439 (2002-03-01), Battles et al.
patent: 6721198 (2004-04-01), Kang
patent: 1019990049972 (2001-06-01), None
Heller Ehrman LLP
Hynix / Semiconductor Inc.
Le Thong Q.
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