Nonvolatile ferroelectric memory device

Details Nonvolatile ferroelectric memory device Nonvolatile ferroelectric memory device

2007-05-01

2007-05-01

Lam, David (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S207000, C365S210130

Reexamination Certificate

active

11057192

ABSTRACT:
A nonvolatile ferroelectric memory device comprises a cell array block, a sense amplifier unit, a main amplifier unit and a data bus unit. The ferroelectric sense amplifier effectively senses and amplifies cell data having a small voltage difference applied to a main bit line, thereby improving operation characteristics in a low voltage. Also, a sensing voltage of the main bit line is lowered, thereby reducing a cross talk noise effect between main bit lines.

REFERENCES:
patent: 6272594 (2001-08-01), Gupta et al.
patent: 6363439 (2002-03-01), Battles et al.
patent: 6574135 (2003-06-01), Komatsuzaki
patent: 6717837 (2004-04-01), Hasegawa et al.
patent: 2005/0207203 (2005-09-01), Kang
patent: 19990080861 (1999-11-01), None

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