Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2006-10-24
2006-10-24
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S189040, C365S189050, C365S230050
Reexamination Certificate
active
07126839
ABSTRACT:
A memory device using a nonvolatile ferroelectric memory cell stores processing results of various programs with a nonvolatile state in a nonvolatile ferroelectric register, and processes multiple data using a multi-port. In the memory device, various program processing results with a nonvolatile state are stored in a FeRAM register in a processing operation of a CPU (Central Processing Unit), thereby preventing destruction of the stored data even in a power-off mode. In addition, the multiple data are processed using a multi-port register, thereby improving reliability and operation speed.
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Heller Ehrman LLP
Hoang Huan
Hynix / Semiconductor Inc.
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