Nonvolatile ferroelectric memory

Details Nonvolatile ferroelectric memory Nonvolatile ferroelectric memory

1998-09-22

2000-04-25

Hoang, Huan

Static information storage and retrieval

Systems using particular element

Ferroelectric

365148, 365149, 365210, G11C 1122

Patent

active

060551755

ABSTRACT:
A nonvolatile memory has a cell structure of one transistor/one capacitor/one resistor (1T/1C/1R). Such a structure allows high speed access operation and efficiently prevent a reference cell from being degraded. The nonvolatile memory includes a first memory cell array having a plurality of first word lines formed in a first direction, a plurality of bit lines in a second direction, a first common signal line formed in one of first and second directions, and a plurality of first memory cells. Each first memory cell is coupled to a corresponding first word line, a corresponding bit line, and the first common signal line. A controller is coupled to the plurality of bit lines, and the controller allows at least one of reading of data stored in a corresponding first memory cell and writing of data to a corresponding first memory cell. Each first memory cell of the first memory cell array includes a first transistor having first and second electrodes and a control electrode, where the control electrode is coupled to the corresponding first word line and the first electrode is coupled to the corresponding bit line. A first capacitor is coupled to the second electrode of the first transistor and the first common signal line. A first resistor is coupled in parallel with the first capacitor.

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