Nonvolatile ferroelectric memory

Details Nonvolatile ferroelectric memory Nonvolatile ferroelectric memory

1998-01-02

1999-08-24

Nelms, David

Static information storage and retrieval

Systems using particular element

Ferroelectric

36518508, 365210, G11C 1122

Patent

active

059432560

ABSTRACT:
A nonvolatile ferroelectric memory comprises a memory cell array having memory cells arranged as a matrix array and each including a charge transfer transistor having a source or drain region connected to a bit line and a gate connected to a word line and a ferroelectric capacitor for information storage having one electrode connected to a plate line and the other electrode connected to the drain or source region of the charge transfer transistor. A first dummy line is arranged outside a bit line formed at an end of the memory cell array and second dummy bit lines are arranged between the bit line at the end of the memory cell array and the first dummy bit line. Dummy memory cells are connected to the second dummy bit line and have the same in configuration and size as the memory cells connected to the bit line.

REFERENCES:
patent: 4339766 (1982-07-01), Rao
patent: 5016216 (1991-05-01), Ali
patent: 5148063 (1992-09-01), Hotta
patent: 5241497 (1993-08-01), Komarek
patent: 5502681 (1996-03-01), Park
patent: 5694369 (1997-12-01), Abe

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