Nonvolatile cell

Details Nonvolatile cell Nonvolatile cell

1999-03-26

2000-08-08

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257321, 36518533, H01L 29788

Patent

active

061005606

ABSTRACT:
A nonvolatile cell comprising a first device comprising a first transistor type and a second device comprising a second transistor type. The first device may have a gate, a source, a drain and a gate oxide layer over the gate. The second device may have a gate, a source, a drain and a floating gate formed between the gate of said first device and the gate of the second device. The floating gate may be configured to store a charge in response to (i) a first voltage applied to the source and drain of said first device and (ii) a second voltage applied to the source and drain of the second device.

REFERENCES:
patent: 5465231 (1995-11-01), Ohsaki
patent: 5587603 (1996-12-01), Kowshik
patent: 5719427 (1998-02-01), Tong et al.
patent: 5844271 (1998-12-01), Sethi et al.
patent: 5898614 (1999-04-01), Takeuchi
patent: 5912937 (1999-06-01), Goetting et al.
patent: 5969382 (1999-10-01), Schlais et al.
An EEPROM for Microprocessors and Custom Logic, By Roger Cuppens, Cornelis D. Hartgring, Jan F. Verwey, Herman L. Peek, Frans A.H. Vollebregt, Elisabeth G.M. Devens and Ingrid A. Sens, IEEE Journal of Solid-Staet Circuits, vol. SC-20, No. 2, Apr. 1985, pp. 603-608.

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