Nonvolatile carbon nanotube memory device using multiwall...

Details Nonvolatile carbon nanotube memory device using multiwall... Nonvolatile carbon nanotube memory device using multiwall...

2007-01-03

2010-11-09

Phung, Anh (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C200S186000, C257SE51003, C257SE51023, C257SE51040, C365S151000, C977S709000, C977S724000, C977S752000, C977S943000

Reexamination Certificate

active

07829886

ABSTRACT:
A nonvolatile carbon nanotube memory device using multiwall carbon nanotubes and methods of operating and fabricating the same are provided. The nonvolatile memory device may include a substrate, at least one first electrode on the substrate, first and second vertical walls on the at least one first electrode spaced from each other, a multiwall carbon nanotube on the at least one first electrode between the first and second vertical walls, second and third electrodes on the first and second vertical walls respectively and at least one fourth electrode spaced a variable distance D (where D≧0) from the multiwall carbon nanotubes.

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