Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2005-12-21
2008-10-28
Berman, Jack I. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492230, C250S491100, C250S492300, C118S7230CB, C118S7230FI, C118S7230MR, C118S7230MA
Reexamination Certificate
active
07442946
ABSTRACT:
A nonuniform ion implantation apparatus comprises a wide ion beam generator for generating a wide ion beam including a plurality of wide ion beams irradiated on at least two sections among a plurality of sections into which a wafer is divided, and a wafer drive unit for vertically reciprocating the wafer while the wide ion beam generated by the wide ion beam generator is irradiated on the wafer. At least one of the wide ion beams has a dose different from that of at least another wide ion beam.
REFERENCES:
patent: 5126575 (1992-06-01), White
patent: 5483077 (1996-01-01), Glavish
patent: 5834786 (1998-11-01), White et al.
patent: 6055460 (2000-04-01), Shopbell
patent: 6750462 (2004-06-01), Iwasawa et al.
patent: 6918351 (2005-07-01), Chen et al.
patent: 7118996 (2006-10-01), Yamazaki et al.
patent: 2003/0200930 (2003-10-01), Chen et al.
patent: 0 444 935 (1996-10-01), None
patent: 05050181 (1993-02-01), None
patent: 04029652 (1993-09-01), None
patent: 1019990058609 (1999-07-01), None
patent: 1020040032799 (2005-11-01), None
Berman Jack I.
Hynix / Semiconductor Inc.
Maskell Michael
Townsend and Townsend / and Crew LLP
LandOfFree
Nonuniform ion implantation apparatus and method using a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonuniform ion implantation apparatus and method using a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonuniform ion implantation apparatus and method using a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4017943