Nonsingle crystal semiconductor and a semiconductor device using

Details Nonsingle crystal semiconductor and a semiconductor device using Nonsingle crystal semiconductor and a semiconductor device using

1991-05-01

1995-02-21

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 65, 257 57, 257 66, H01L 2978, H01L 2904

Patent

active

053918932

ABSTRACT:
A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-crystal semiconductor layer member having at least one intrinsic, non-single-crystal semiconductor layer, and a second conductive layer disposed on the non-single-crystal semiconductor layer. The intrinsic non-single-crystal semiconductor layer contains sodium and oxygen in very low concentrations where each concentration is 5.times.10.sup.18 atoms/cm.sup.3 or less.

REFERENCES:
patent: 4053335 (1977-10-01), Hu
patent: 4091407 (1978-05-01), Williams
patent: 4469568 (1984-09-01), Kato et al.
patent: 4667214 (1987-05-01), Sekimura et al.
Schmidt P. F., J. Electrochem. Soc.: Solid-State Science And Technology Jan. 1983 pp. 196-199. "Contamination-Free . . . Materials."

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