Nonlithographic method to produce self-aligned mask,...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...

Reexamination Certificate

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C438S762000, C438S765000, C428S195100

Reexamination Certificate

active

06911400

ABSTRACT:
A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.

REFERENCES:
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