Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2005-06-28
2005-06-28
Lebentritt, Michael S. (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S762000, C438S765000, C428S195100
Reexamination Certificate
active
06911400
ABSTRACT:
A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.
REFERENCES:
patent: 6641899 (2003-11-01), Colburn et al.
O. Prucker and J. Ruhe, “Polymer Layers Through Self-Assembled Monolayers of Initators”, vol. 14, No. 24, p. 6893-6898, American Chemical Society, Oct. 30, 1998.
Noo Li Jeon, Insung S. Choi, and George M, Whitesides, “Patterned Polymer Growth on “”Silicon Surfaces Using microcontact Printing and Surface-Initiated Polymerization”, vol. 75, No. 26, p. 42001-4203, American Institute of Physics, Dec. 27, 1999.
Boltau et al., “Surface-induced Structure Formation o f Polymer Blends on Patterned Substrates”, Letter to Nature, vol. 391, p. 877-879, Feb. 26, 1998.
Jiang et al., “Selective Deposition in Layer-by-Layer Assembly: Functional Graft Copolymers as Molecular Templates”, American Chemical Society, vol. 16, p. 8501-8509, Sep. 29, 2000.
Lenz et al., “Morphological Transitions of Wetting Layers on Structured Surfaces”, The American Physical Society, vol. 80, No. 9, p. 1920-1923, Mar. 2, 1998.
Kielhorn et al., “Phase Separation of Polymer Blend Films Near Patterned Surfaces”, Journal of Chemical Physics, vol. 111, No. 5, Aug. 1, 1999.
Heier et al., “Transfer of Chemical Substrate Pattern into an Island-Forming Diblock Copolymer Film”, Journal of Chemical Physics, vol. 111, No. 24, Dec. 22, 1999.
Colburn Matthew E
Gates Stephen M
Hedrick Jeffrey C
Huang Elbert
Nitta Satyanarayana V
Geyer Scott B.
IBM Corporation
International Business Machines - Corporation
Lebentritt Michael S.
Morris, Esq. Daniel P.
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