Nondestructive testing method for oxide semiconductor layer...

Details Nondestructive testing method for oxide semiconductor layer... Nondestructive testing method for oxide semiconductor layer...

2009-11-19

2011-12-20

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

C438S001000, C438S007000, C438S044000, C438S046000, C438S069000, C257SE21530

Reexamination Certificate

active

08080434

ABSTRACT:
A nondestructive testing method for an oxide semiconductor layer includes the steps of applying excitation light to an amorphous or polycrystalline target oxide semiconductor layer to be tested and measuring an intensity of photoluminescence in a wavelength region longer than a wavelength corresponding to a bandgap energy among light emitted from the target oxide semiconductor layer; and estimating a film property of the target oxide semiconductor layer on the basis of measurement results.

REFERENCES:
patent: 2004/0253759 (2004-12-01), Garber et al.
patent: 2000-28518 (2000-01-01), None
patent: 2006-165529 (2006-06-01), None
Mikio Yamazaki et al, Photo luminescence of a polycrystalline ZnO sputter film, 47th Applied physics-related association proceedings, Japan, Society of Applied Physics, Mar. 2000, p. 579.
Japanese Office Action issued Dec. 14, 2010, for corresponding Japanese Appln. No. 2008-298292.

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