Nondestructive readout memory utilizing ferroelectric capacitors

Details Nondestructive readout memory utilizing ferroelectric capacitors Nondestructive readout memory utilizing ferroelectric capacitors

1996-12-17

1999-10-12

Zarabian, A.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, G11C 1122

Patent

active

059663189

ABSTRACT:
A memory includes a bitline data signal input (24), at least one memory unit (20), a writing circuit (128) which writes a polarization state into each memory unit (20) responsive to the bitline data signal input, and a sensing circuit (130) that senses a polarization state of each memory unit (20). Each memory unit (20) includes a ferroelectric capacitor (22) and a buffer amplifier (26) in electrical series relationship with the ferroelectric capacitor (22) and the bitline data signal input (24). The buffer amplifier (26) capacitively isolates the ferroelectric capacitor (22) from the bitline data signal input (24) so that the ferroelectric capacitor (22) may be made smaller in size than would otherwise be the case.

REFERENCES:
patent: 5262983 (1993-11-01), Brennan
patent: 5297077 (1994-03-01), Imai
patent: 5303182 (1994-04-01), Nakao
patent: 5559733 (1996-09-01), McMillan

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