Non-volatile storage device

Details Non-volatile storage device Non-volatile storage device

1992-05-19

1994-06-07

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257411, 257639, H01L 2978

Patent

active

053192303

ABSTRACT:
A non-volatile storage device such as a PROM (Programmable Read Only Memory). To obtain an adequate sum of captured charges by a low storing voltage and to prevent charges from being injected from a gate electrode, a silicon oxide film, a composite silicon oxide
itride film and a silicon oxide film are formed in order on a gate region of a silicon substrate on which a source region and a drain region are formed. Since the composite silicon oxide
itride film has many interfaces between the silicon oxide region and the silicon nitride region, it accumulates a lot of charges from the silicon substrates.

REFERENCES:
patent: 3765935 (1973-10-01), Rand et al.
patent: 3805130 (1974-04-01), Yamazaki
patent: 4621277 (1986-11-01), Ito et al.
patent: 4868632 (1989-09-01), Hayashi et al.
patent: 5034798 (1991-07-01), Ohsima
patent: 5187636 (1993-02-01), Nakao

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