Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1993-02-16
1994-12-13
Popek, Joseph A.
Static information storage and retrieval
Systems using particular element
Ferroelectric
257295, G11C 1122
Patent
active
053734629
ABSTRACT:
A process for producing an improved non-volatile storage cell of the metal-ferroelectric-semiconductor type is provided. The non-volatile storage cell has at least one metal-ferroelectric-semiconductor transistor formed in a semiconductor substrate and having a source (5), a drain (6), and a gate (4). The gate is insulated from the source and the drain by a ferroelectric layer (2). The transistor has at least one lateral programming electrode (BL) in contact with the ferroelectric layer and insulated from the gate. In a preferred embodiment the cell also has a dielectric layer (7) interposed between the ferroelectric layer and the substrate. Particular utility for the present invention is found in the area of static memory devices, although other utilities are contemplated.
REFERENCES:
patent: 2791759 (1957-05-01), Brown
patent: 3832700 (1974-08-01), Wu et al.
patent: 4888630 (1989-12-01), Paterson
patent: 5198994 (1993-03-01), Natori
"A Ferroelectric Field Effect Device" By:Heyman et al Proceedings of the IEEE, vol. 54, No. 6, pp. 842-848 Jun., 1966.
Achard Herve
Joly Jean-Pierre
Commissariat a l''Energie Atomique
Popek Joseph A.
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