Non-volatile static random access memory

Static information storage and retrieval – Systems using particular element – Flip-flop

Reexamination Certificate

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C365S185080, C365S185070, C365S185010

Reexamination Certificate

active

07020007

ABSTRACT:
Non-volatile SRAMs having an improved recall characteristic are disclosed. An illustrated non-volatile SRAM includes a plurality of unit memory cells arranged in an array. Each of the plurality of unit memory cells comprises a SRAM unit and a non-volatile circuit. The non-volatile circuit includes storage transistors, SONOS transistors connected to the storage transistors, and recall transistors connected to the SONOS transistors. The thickness of the gate insulation films of the recall transistors is thinner than the thickness of the gate insulation films of the storage transistors.

REFERENCES:
patent: 5602776 (1997-02-01), Herdt et al.
patent: 5986932 (1999-11-01), Ratnakumar et al.

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