Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1993-05-17
1995-02-14
Popek, Joseph A.
Static information storage and retrieval
Systems using particular element
Ferroelectric
365156, 365228, 257295, G11C 1122
Patent
active
053901436
ABSTRACT:
A non-volatile static read/write memory is formed by a bistable memory cell which is programmable to operate statically in one of two alternative output states, corresponding to binary output voltages. The static memory cell is formed by a pair of MOSFET inverters having cross-coupled inputs and outputs. A ferroelectric storage element fabricated from a material such as lead zirconate titanate or barium strontium titanate is positioned to be electrically polarized in one of two alternative orientations determined by the memory cell's output voltage. The ferroelectric storage element maintains its electric polarization upon power-down of the memory cell. Upon subsequent power-up of the memory cell, the ferroelectric storage element biases the memory cell toward one of the memory cell's two output states in accordance with the electric polarization of the ferroelectric storage element, and in accordance with the memory cell's output state at power-down.
REFERENCES:
patent: 4809225 (1989-02-01), Dimmler et al.
Kazuo Itabashi et al., "A Split Wordline Cell For 16 Mb SRAM Using Polysilicon Sidewall Contacts," 1991, IEEE, pp. 17.4.1-17.4.3.
Micron Semiconductor Inc.
Popek Joseph A.
LandOfFree
Non-volatile static memory devices and operational methods does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-volatile static memory devices and operational methods, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile static memory devices and operational methods will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-292715