Non-volatile static memory cell

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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Details

C365S154000, C365S185070

Reexamination Certificate

active

07663917

ABSTRACT:
A static memory cell comprising a pair of cross-coupled inverters (10, 12) which is “shadowed” with non-volatile memory elements (14, 16) so that data written in the static memory can be stored in the non-volatile cell, but also can be recalled later. The non-volatile cells (14, 16) are programmed with opposite data to increase the robustness of the retrieval process, and they are cross-coupled to the internal nodes (A, B) of the static memory cell, one the non-volatile cells (14) having a control gate connected to B and its source to A, and the other non-volatile element (16) having a control gate connected to A and its source to B. The drain of each non-volatile element (14, 16) is connected by means of a respective pMOS transistor (18, 20) to a program supply means.

REFERENCES:
patent: 4527255 (1985-07-01), Keshtbod
patent: 4541073 (1985-09-01), Brice et al.
patent: 4635229 (1987-01-01), Okumura et al.
patent: 5602776 (1997-02-01), Herdt et al.
patent: 5646885 (1997-07-01), Matsuo et al.
patent: 5696455 (1997-12-01), Madurawe
patent: 5805496 (1998-09-01), Batson et al.
patent: 5914895 (1999-06-01), Jenne
patent: 6304482 (2001-10-01), Lin et al.
patent: 6363011 (2002-03-01), Hirose et al.
patent: 6414873 (2002-07-01), Herdt
patent: 6515907 (2003-02-01), Miyagi
patent: 7164608 (2007-01-01), Lee
patent: 58-94227 (1983-06-01), None
patent: 60-151898 (1985-08-01), None
patent: 62-33393 (1987-02-01), None
patent: 7-226088 (1995-08-01), None
patent: 8-509091 (1996-02-01), None
patent: 3-97197 (1997-04-01), None
patent: 95/22144 (1995-08-01), None
Chrzanowska-Jeske, “Architecture and Technology of FPGAs-an Overview”, Northcon/93, Oct. 12-14, 1993, pp. 82-86.
Notification of Reason for Rejection in JP 2006-516674 (Apr. 28, 2009).
Office Action in CN 200480016966.9.
Office Action in EP 04736564.8 (Dec. 12, 2006).

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