Non-volatile SRAM

Details Non-volatile SRAM Non-volatile SRAM

2005-12-27

2005-12-27

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000, C365S185080

Reexamination Certificate

active

06980459

ABSTRACT:
A SRAM cell wherein the pull up load of the cell is inherent ferroelectric leakage. The power down writeback may include boosting the word line. The power down writeback may also include discharging the plate from VDDto ground. Furthermore, the plate is held high during read and write operations.

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Tohru Miwa, et al., “NV-SRAM: A Nonvolatile SRAM with Backup Ferroelectric Capacitors” IEEE Journal of Solid-State Circuits, vol. 36, No. 3, pp. 522-527, Mar. 2001.
Tohru Miwa, et al., “A Nonvolatile SRAM with Back-up Ferroelectric Capacitors” IEEE Custom Integrated Circuits Conference, pp. 65-68, 2000.

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