Non-volatile SONOS memory device and method for...

Details Non-volatile SONOS memory device and method for... Non-volatile SONOS memory device and method for...

2005-01-18

2005-01-18

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S325000

Reexamination Certificate

active

06844589

ABSTRACT:
A non-volatile SONOS memory device includes a semiconductor substrate having a source region and a drain region. A channel is formed between the source region and the drain region. A gate insulation layer including a nitride layer is formed over the channel, and a gate is formed over the gate insulation layer. The channel is a stepped channel including a top part, an inclined part and a bottom part. The nitride layer is formed over the inclined part and the bottom part, and the top part of the channel is adjacent to the source region and the bottom part of the channel is adjacent to the drain region.

REFERENCES:
patent: 6472706 (2002-10-01), Widdershoven et al.

Affiliated with

Also associated with

Rating

Non-volatile SONOS memory device and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile SONOS memory device and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile SONOS memory device and method for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3416527