Non-volatile shadow storage cell with improved level shifting ci

Details Non-volatile shadow storage cell with improved level shifting ci Non-volatile shadow storage cell with improved level shifting ci

1987-08-03

1988-11-22

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Capacitors

365189, 365203, 220 1, G11C 1124, G11C 700

Patent

active

047870664

ABSTRACT:
A non-volatile storage cell utilizing improved level shifting circuitry to charge and discharge at least a single isolation device, preferably of the Fowler-Nordheim tunneling type, wherein such level shifting input/output circuit is fully static providing for the elimination of any requirement for a gate booster capacitor and allows the high voltage source to replace any long term charge loss. The use of silicon area is reduced.

REFERENCES:
patent: 4510584 (1985-04-01), Dias et al.

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