Non-volatile semiconductor storage device having improved progra

Details Non-volatile semiconductor storage device having improved progra Non-volatile semiconductor storage device having improved progra

1999-04-26

2000-12-19

Dinh, Son T.

Static information storage and retrieval

Floating gate

Particular biasing

36518529, 3651853, 36518907, G11C 1606

Patent

active

061634840

ABSTRACT:
An electrically erasable and programmable non-volatile semiconductor storage device where data is read out by comparing the output of a memory cell and the output of a reference cell by a sense amplifier. In this device, the reference cell is built so that it has a given threshold voltage value, and the gate voltage of the memory cell and the gate voltage of the reference cell are allowed to be set independently.

REFERENCES:
patent: 5157626 (1992-10-01), Watanabe
patent: 5754475 (1998-05-01), Bill et al.
patent: 5859796 (1999-01-01), Cleveland
patent: 5886927 (1999-03-01), Takeuchi
patent: 5946238 (1999-08-01), Compardo et al.
patent: 5982662 (1999-11-01), Kobayashi et al.
patent: 6005805 (1999-12-01), Tekeuchi

Affiliated with

Also associated with

Rating

Non-volatile semiconductor storage device having improved progra does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor storage device having improved progra, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor storage device having improved progra will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-275916