Non-volatile semiconductor storage device having a salicide...

Details Non-volatile semiconductor storage device having a salicide... Non-volatile semiconductor storage device having a salicide...

2005-08-09

2005-08-09

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S326000, C257S390000

Reexamination Certificate

active

06927450

ABSTRACT:
A method of manufacturing a semiconductor device include a step of forming an insulating layer, which is obtained by building up a first oxide film, a nitride film and a second oxide film on a substrate in the order mentioned, and a Salicide step of forming a Salicide-structure gate electrode on the insulating film. A silicidation reaction between the substrate surface and an N+ diffusion region is prevented in the Salicide step by causing the insulating layer to remain even in a region on the substrate besides that immediately underlying the gate electrode.

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patent: 5990514 (1999-11-01), Choi et al.
patent: 2001-512290 (2001-08-01), None
patent: 2003-258135 (2003-09-01), None
patent: WO 99/07000 (1999-02-01), None
T.Y. Luo, et al. Effect of H2Content on Reliability of Ultrathin In-Situ Steam Generated (ISSG) SiO2IEEE Electron Device Letters, vol. 21 No. 9 Sep. 2000 pp. 430-432.

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