Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-12
2011-07-12
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S326000, C257SE29309, C257SE21423, C438S287000
Reexamination Certificate
active
07977733
ABSTRACT:
A non-volatile semiconductor storage device includes: a memory cell area in which a plurality of electrically rewritable memory cells are formed; and a peripheral circuit area in which transistors that configure peripheral circuits to control the memory cells are formed. The memory cell area has formed therein: a semiconductor layer formed to extend in a vertical direction to a semiconductor substrate; a plurality of conductive layers extending in a parallel direction to, and laminated in a vertical direction to the semiconductor substrate; and a property-varying layer formed between the semiconductor layer and the conductive layers and having properties varying depending on a voltage applied to the conductive layers. The peripheral circuit area has formed therein a plurality of dummy wiring layers that are formed on the same plane as each of the plurality of conductive layers and that are electrically separated from the conductive layers.
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Arai Fumitaka
Kamigaichi Takeshi
Sato Atsuhiro
Shiino Yasuhiro
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Scarlett Shaka
Smith Matthew
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