Non-volatile semiconductor storage apparatus with...

Details Non-volatile semiconductor storage apparatus with... Non-volatile semiconductor storage apparatus with...

2006-03-07

2006-03-07

Owens, Douglas W. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S326000

Reexamination Certificate

active

07009242

ABSTRACT:
A memory cell array is provided at a non-volatile semiconductor storage apparatus. In a memory cell array, the unit cell includes a memory cell field effect transistor and a select field effect transistor. The memory cell field effect transistor has a floating gate and a control gate. The select field effect transistor has a drain connected to a source of the memory cell field effect transistor. The floating gate and control gate extends to a position above a gate of the select field effect transistor.

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patent: 09-129759 (1997-05-01), None

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