Non-volatile semiconductor memory with outer drain diffusion lay

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Other Related Categories

257326, 257335, 257411, 365185, H01L 2978

Type

Patent

Status

active

Patent number

053110498

Description

ABSTRACT:
A non-volatile semiconductor memory wherein in a semiconductor substrate at both sides of a gate structure, a source diffusion layer and drain diffusion layer having an opposite conductivity type impurity to that of the substrate are provided with a high impurity concentration and a threshold value of a transistor is changed by holding charges in an insulating film in the gate structure, an outer diffusion layer having the same conductivity type impurity as that of the substrate and the impurity concentration higher than that of the substrate intervenes between the drain diffusion layer and the substrate.

REFERENCES:
patent: 4019198 (1977-04-01), Endo et al.
patent: 4630086 (1986-12-01), Sato et al.
patent: 4943836 (1990-07-01), Mori
patent: 5079611 (1992-01-01), Ikeda et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Non-volatile semiconductor memory with outer drain diffusion lay does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory with outer drain diffusion lay, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory with outer drain diffusion lay will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2414049

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.