Non-volatile semiconductor memory having programming region for

Details Non-volatile semiconductor memory having programming region for Non-volatile semiconductor memory having programming region for

1995-04-17

1997-08-12

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257318, 257321, H01L 29788

Patent

active

056568380

ABSTRACT:
An electrically erasable and programmable read only memory device includes a plurality of memory cells, each of which has a drain region, a source region, and a programming region, a first gate insulating film covering a part of the drain region, a second gate insulating film covering a part of the programming region, and a floating gate having a first portion overlapping the first gate insulating film to form a first capacitance therebetween and a second portion overlapping the second gate insulating film to form a second capacitance. The first capacitance is designed to be larger than the second capacitance, so that the injection and extraction of carriers take place between the programming region and the floating gate.

REFERENCES:
patent: 4019197 (1977-04-01), Lohstroh et al.
patent: 4924278 (1990-05-01), Logie
A. Thomsen et al., "A Floating-Gate MOSFET with Tunneling Injector Fabricated Using a Standard Double-Polysilicon CMOS Process", IEEE Electron Device Letters, Mar. 1991, vol. 12, No. 3, pp.111-113.

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